SAMSUNG HAS BEGUN mass production of what it calls the industry's first 'Through Silicon Via' (TSV) DDR4 memory in 128GB modules.
Aimed at powering enterprise servers and data centres, the memory is touted as the largest capacity and the highest energy efficiency of any DRAM modules ever made, while also operating at high speed.
Samsung's new TSV registered dual inline memory module (RDIMM) follows the introduction of its 3D TSV 64GB DDR4 DRAM in 2014, and marks a potential breakthrough as it is said to "open the door for ultra-high capacity memory at the enterprise level".
The 128GB TSV DDR4 RDIMM comprises 144 DDR4 chips, arranged into 36 4GB DRAM packages, each containing four 20nm-based 8Gb chips assembled with TSV packaging technology.
Samsung said that TSV packages are unique because where conventional chip packages connect die stacks using wire bonding, the TSV chip dies are ground down to a few dozen micrometres, pierced with hundreds of fine holes and connected vertically by electrodes passing through the holes, allowing a significant boost in signal transmission.
"The volume production of our high speed, low-power 128GB TSV DRAM module will enable our global IT customers and partners to launch a new generation of enterprise solutions with dramatically improved efficiency and scalability for their investment," said Samsung's EVP of memory sales and marketing, Joo Sun Choi.
"We will continue to expand our technical cooperation with global leaders in servers, consumer electronics and emerging markets, where consumers can benefit from innovative technology that enhances their productivity and the overall user experience."
As well as the industry's highest capacity and TSV's advanced circuitry, Samsung's 128GB TSV DDR4 module has a special design through which the master chip of each 4GB package embeds the data buffer function to optimise module performance and power consumption.
As a result, Samsung's TSV DDR4 RDIMM is said to provide a low-power solution for next-generation servers with speeds at up to 2,400Mbps, reaching nearly twice the performance while cutting power use by 50 percent compared with the firm's previous DRAM modules.
"We are responding to the growing demand for ultra-high capacity DRAM by accelerating production of TSV technology in the market and quickly ramping up 20nm 8Gb DRAM chips to improve manufacturing productivity," added Samsung.
"In solidifying its technology leadership and expanding the market for premium memory solutions, the company plans to provide a complete line up of its new high-performance TSV DRAM modules within the next several weeks including 128GB load reduced DIMMs."
Samsung said earlier this year that it will open a $14.4bn fabrication facility in South Korea in what will be its biggest investment in a single plant. Production is scheduled to begin in the first half of 2017.
It is not known at this stage whether the fab will make logic or memory chips, but Samsung said it will be built in the city of Pyeongtaek, south of Seoul, and is expected to bolster profits in the firm's well-established and successful semiconductor business as well as grow beyond the declining sales of its smartphones. µ
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