HOT ON THE HEELS of Toshiba, storage maker Sandisk has announced its first 15nm NAND flash process node.
Unlike the Toshiba product that we reported yesterday, the Sandisk product will launch with both two bits-per-cell and three bits-per-cell NAND flash memory architectures set to go into production during the second half of 2014.
Three bit-per-cell architectures placed in serial will allow up to 128Gb for 16GB chip capacity, which the company says will be rolled out across all its products from memory cards to enterprise SSDs.
The Toshiba announcement was more guarded, offering removable devices with a view to adding fixed drive compatibility at a later date, with the initial production run limited to two bits-per-cell chips.
This will probably lead both companies to claim the 'first', depending on which criteria you apply.
"We are thrilled to continue our technology leadership with the industry's most advanced flash memory process node, enabling us to deliver the world's smallest and most cost effective 128Gb chips," said Dr Siva Sivaram, Sandisk SVP of memory technology.
"We are delighted that these new chips will allow us to further differentiate and expand our portfolio of NAND flash solutions."
The 1Z-nanometer technology, as the product is branded, uses All-Bit-Line (ABL) architecture that contains proprietary programming algorithms and multi-level data storage management schemes.
It is, however, not the first 128Gb chip. That honour falls to a venture between Micron and Intel that premiered in February.
Micron, better known to the consumer market as Crucial, recently launched its M550 solid-state hard drive, capable of read speeds of up to 550MB/s. µ
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