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Samsung announces 20nm 4Gb DDR3 RAM

Twice the yield of 30nm DRAM
Tue Mar 11 2014, 15:07
20nm-4gb-ddr3-03

KOREAN INDUSTRIAL GIANT Samsung has announced what it describes as the industry's "most advanced" 4Gb DDR3 memory chip.

The company's latest 20nm process allows 30 percent higher fab productivity than the firm's previous 25nm process and twice that of a standard 30nm DRAM chip.

It also claims its new parts are 25 percent more energy efficient than equivalent 25nm modules.

"Samsung's new energy-efficient 20nm DDR3 DRAM will rapidly expand its market base throughout the IT industry including the PC and mobile markets, quickly moving to mainstream status," said Young-Hyun Jun, Samsung Electronics EVP of memory sales and marketing.

"Samsung will continue to deliver next generation DRAM and green memory solutions ahead of the competition, while contributing to the growth of the global IT market in close cooperation with our major customers."

Samsung has achieved the new 20nm process by modifying its double pattering technology allowing it to be fabbed on existing ArF photolithography equipment. It speculated that this will set the bar for even thinner DRAM production in the near future.

Samsung recently announced DDR4 memory aimed at the enterprise market, capable of delivering twice the speed of DDR3 but with a fraction of the voltage, lowering both running costs for servers and the cooling required by large facilities.

Samsung has not announced availability or pricing for the modules yet, but said that mass production has begun.

A recent Gartner report estimated that the value of the DRAM market will reach $37.9bn in 2014, increasing $2.3bn this year, before facing an anticipated downturn in 2015. µ

 

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