CHIPMAKER Samsung announced that it has started to produce 4Gb LPDDR3 DRAM modules using a 20nm class process node.
Samsung's market leading position in the DRAM market has been unchallenged for years, but with Micron trying to complete its purchase of Elpida and Hynix working with chip vendors on GDDR, the firm is pushing ahead with its low-power DDR memory research. Samsung announced that it has put 4Gb LPDDR3 DRAM modules into production on a 20nm class process node.
Samsung said that its LPDDR3 modules that are intended to be used in smartphones and tablets will run at 2.13Gbit/s. However the firm is relying on more than just performance to shift its new modules, saying that four of its 4Gb LPDDR3 modules can be used to create a 2GB package with a height of 0.8mm.
Young-Hyun Jun, EVP of memory sales and marketing at Samsung Electronics said, "By providing the most efficient next-generation mobile memory with a very large data capacity, we are now enabling OEMs to introduce even more innovative designs in the marketplace.
"Our 20nm-class four gigabit mobile DRAM provides another example of our ability to deliver well-differentiated, high-performance, high-density memory to customers in a timely manner."
Although DRAM makers such as Samsung have been hurting as the PC industry's use of mature DDR3 modules declined and waning demand kept prices low, low-power smartphones and tablets represent a growing market with new technology that commands a price premium.
Samsung added that it plans to ramp up production of DRAM on its 20nm class process node later in the year, putting further pressure on Hynix and Micron. µ
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