MEMORY MAKER Samsung has announced that it is producing 128Gbit 3-bit multi-level cell (MLC) NAND flash chips for solid-state disk (SSD) drives.
Samsung has been pushing its NAND flash production to feed the growing capacity and performance demands of smartphones, tablets and SSDs. Now the firm has announced that it has put 128Gbit 3-bit MLC NAND chips into production using its 10nm class process node.
While Samsung wouldn't say exactly what process node it is using - 10nm class refers to anything between 10nm and 20nm - the firm did say bandwidth is 400Mbit/s on the toggle DDR2 interface. Samsung also said that the chips will end up in 128GB memory cards and strongly hinted that the chips will also end up in its range of high-end SSDs.
Younghyun Jun, executive VP or memory sales and marketing at Samsung Semiconductor said, "By introducing next-generation memory storage products like the 129Gb NAND chip, Samsung is extremely well situated to meet growing global customer needs.
"The new chip is a critical product in the evolution of NAND flash, one whose timely production will enable us to increase our competitiveness in the high density memory storage market."
Samsung started mass production of 64Gbit MLC NAND flash back in November and the doubling of density in five months is an impressive feat, along with its ability to produce chips using a 10nm class process node.
Samsung didn't say when products based on the 128Gbit chips will appear but they will be unlikely to see the light of day for a few months. µ
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