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Micron announces DDR3L-RS memory for ultrabooks

30nm chips offer improved energy efficiency
Wed Sep 19 2012, 10:02
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MEMORY MAKER Micron announced a line of high efficiency DRAM memory for ultrathin computing devices and tablets today.

The company said that its DDR3L-RS memory will offer manufacturers improved performance while maximising battery life. The 30nm chips will be offered in 2Gb and 4Gb configurations and primarily will be targeted at the tablet and ultrathin notebook markets.

The company said that it plans to expand the lineup to 8Gb configurations by the end of the year.

According to Micron, the DDR3L-RS chips would prove particularly efficient in their sleep state, where the chips have been designed to maximise battery life. The company said that the while the chips will be more efficient, the company has also been able to maintain a similar performance level to traditional DRAM hardware.

"The feedback from our customers about this new category of DRAM has been extremely positive," said Micron VP of DRAM marketing Robert Feurle.

"We are pleased to be the leading provider of DRAM solutions which are enabling the intrduction of ultrathin notebooks and tablets that are thinner, faster and run longer on a single charge."

Intel has made improved energy efficiency and battery life a key component of its latest generation of ultrabooks.

The company noted that the improved power management and energy efficiency features of its Haswell processor family will translate exceptionally well to ultrabooks while also venturing into the desktop and even server markets in the coming years. µ

 

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