SEMICONDUCTOR FIRMS Intel and Micron have teamed up to produce the world's first 128Gb NAND flash device.
The die will be fabbed on a 20nm process and grouping eight together will equal 1Tb, or 128GB of data storage in a small package about the size of a fingertip. The firms said the device will be going into mass production in the first half of next year and will be ideal for smartphones and tablets.
Glen Hawk, VP of NAND solutions at Micron said, "As portable devices get smaller and sleeker, and server demands increase, our customers look to Micron for innovative new storage technologies and system solutions that meet these challenges,"
"Our collaboration with Intel continues to deliver leading NAND technologies and expertise that are critical to building those systems."
Samples will be available to vendors next month, so we could see devices such as smartphones and tablets launched with this storage technology next year.
The 128Gb capacity flash is twice the storage size of the companies' existing 20nm 64Gb NAND device. Intel and Micron said the new capacity device meets the ONFI 3.0 specification of speeds up to 333MT/s.
Rob Crooke, VP of memory solutions at Intel said, "It is gratifying to see the continued NAND leadership from the Intel-Micron joint development with yet more firsts as our manufacturing teams deliver these high-density, low-cost, compute-quality 20nm NAND devices." µ
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