Samsung announces 30nm DDR3 RAM

KOREAN ELECTRONICS GIANT Samsung has announced 30nm class high performance and low power DRR3 RAM for servers.

The 32GB registered dual Inline memory modules (RDIMMs) offer speeds of up to 1,333 Mbits/s compared to the previous speed of 800 Mbits/s. The RAM consumes only 4.5W, which Samsung claims makes it the lowest power consuming memory module for use in enterprise level servers.

Wanhoon Hong, EVP of device solutions at Samsung Electronics said, "These 32GB RDIMMs fully support the high-density and high-performance requirements of next-generation high-capacity servers."

The 30nm class supercedes the previous 40nm class and uses 3D through silicon via (TSV) package technology. The TSV technology allows the power savings and Samsung said it "enables a multi-stacked chip to function at levels comparable to a single silicon chip by shortening signal lines significantly, thereby lowering power consumption and achieving higher density and operational speed."

When compared to load-reduced, dual-inline memory module (LRDIMM) 30nm memory modules, the TSV technology provides around a 30 per cent energy saving, according to Samsung. Engineering samples have been release for evaluation.

By working with CPU controller designers Samsung plans to make higher capacity modules than 32GB with upcoming 20nm technology. µ