Samsung outs 28nm process node for 2GHz smartphone chips

CHIP MAKER Samsung has announced that it has qualified a 28nm process node for making system-on-chip (SoC) silicon go beyond 2GHz.

Samsung has managed to use High-K Metal Gate technology to make the 28nm process node viable. The firm announced two variants of its 28nm process node, with the Low Power process node reducing power consumption by 35 per cent and current leakage by 30 per cent over its current 45nm chips.

To complement its 28nm low power process node, Samsung also announced a 28nm LPH HKMG process node. That process node offers 60 per cent power reduction at the same frequency and leakage levels as its 45nm process node.

Samsung's intention in moving to a 28nm process node is to create SoCs for smartphones and tablets. The firm claims that its LPH HKMG process will allow it to fab chips that run at higher frequencies beyond the 2GHz mark.

KH Kim, EVP of Samsung's foundry business said, "our customers are able to design and manufacture chips that offer the best possible user experience on the next generation of smart devices such as smartphones, tablet PCs and internet TVs. Samsung Foundry will continue to offer smart and innovative foundry solutions by leveraging Samsung's proven semiconductor business leadership".

Aside from targeting games, chip makers pitch ever powerful chips in order to tackle one of the issue of natural control interfaces. The ability to talk to a smartphone, recognise complex gestures or recognise the user based on analysing an image all use significant amounts of processor power.

Samsung has said that it is accepting orders for its 28nm process node already has several customer designs silicon-validated. It didn't say when the chips will actually appear in phones but it's likely to be the best part of a year before a 28nm Samsung chip tips up in your pocket. µ