MOBILE DRAM with 4Gb storage using 20nm process technology and a wide data transfer interface is Samsung's goal for 2013.
But for now it is announcing that it has produced 1Gb mobile DRAM with a wide interface using 50nm process technology. Developed for smartphones and tablets, the 1Gb capable DRAM is said by Samsung to have four times the bandwidth of the firm's low power DDR2 DRAM that it announced last year.
The 1Gb DRAM chips can transmit data at 12.8GBps while reducing power consumption by approximately 87 per cent, Samsung claims. Samsung's wide I/O DRAM uses 512 pins for data input and output compared to the previous generation that had a maximum of 32 pins.
Byungse So, SVP of memory product planning and application engineering at Samsung Electronics said, "We will continue to aggressively expand our high-performance mobile memory product line to further propel the growth of the mobile industry."
Samsung will present a paper related to wide I/O DRAM technology at the 2011 International Solid-State Circuits Conference being held this week in San Francisco. µ