Samsung mass produces 4Gb 40nm DDR3

KOREAN MANUFACTURER Samsung Electronics has started churning out low-power 4Gb DDR3 devices using 40nm process technology.

Dong-Soo Jun, executive vice president or memory marketing at Samsung said that when its 40nm-class DDR3 was first introduced last July, Samsung was well ahead of the curve for high density, high performance DDR3. "Now, in just seven more months, we have introduced an ultra-low power 'Green Memory' - the 4Gb DDR3, which is double the density of its predecessor. At a module density of 16GB, the 4Gb based module can save 35 percent in power consumption, to support customer requirements for more energy-efficient designs," he said.

Production of the 4Gb DDR3 means the amount of memory for use in servers has been increased to 32GB per channel, which is twice the maximum density achieved with modules based on 2Gb components.

Samsung wants to migrate more than 90 per cent of its DDR DRAM production to 40nm-class process technology. µ