The INQ: less you forget
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Boffins improve memory capacity
BOFFINS AT Arizona State University have emerged from their smoke filled labs with a new way to improve the capacity of memory chips.
The technique involves stacking memory layers on top of one another inside a single chip and saving on manufacturing costs.
Michael Kozicki, an electrical engineering professor at Arizona State University and director of the Center for Applied Nanoionics said in a statement that his research will mean that devices will become more portable and less dependent on power charging.
His goal has always been to replace NAND Flash memory with another material that is common to the semiconductor industry. He has done this by adding silicon to the memory cell. Realising that the limits of current technology are due to the physical attributes of semiconductors, he thought it would be clever to stack the memory cells rather than spread them out.
Kozicki said that the problem was that if you joined several memory cells together you wouldn't be able to access one without accessing all of the others too, because they were all wired together. He needed a way to isolate each cell so that it has a storage element and an access device.
Instead of using one layer of silicon, Kozicki uses several to allow a three-dimensional memory fabrication process. He found that by adding a diode in the memory cell, the diode would also isolate them.
He did this with layers of different types of silicon, without needing the substrate for controlling the memory cells. Access devices could then be installed in the layers of memory above the silicon substrate. µ
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The spam bot called Drashek is out of hand again. Please bring it back to its padded room.
In Minsters' TrAfAlGeR Sq ,Grand Chiense New year was held. Did YOU too? So Very Internaionale', even pARIS in spring. Do you have FRENCH love? heres Peoples Link:
http://english.people.com.cn/90001/90782/90873/6898730.html
Just kind 'o haphazzardly Capitolize stuff, like hollywood movie posters. Don't forget random returns, verry 'bot like. Power is now! Gives unique view,
often impossible like so-called MOON landing, yet sometimes newness never thought of Before. Time Travel, maybe!
drashek Bringing Local News from aFar, why not you too?.
In Minsters' trafalger Sq ,Grand Chiense New year was held. So Very Internaionale'. heres Peoples Link:
http://english.people.com.cn/90001/90782/90873/6898730.html
Just kind 'o haphazzardly Capitolize stuff, like hollywood movie posters. Gives unique view, often impossible, yet sometimes newness never thought of Before.
drashek Bringing Local News from aFar.
@Ciantic - I htink he's not a bot, and I offer these reasons:
(1) Bots that piece that mich info together and manage to stay sort of on topic (like this week) know how to use punctuation and grammar. He doesn't.
(2) I've done an internet search and I have found no one taking responsibility/credit. Geeks are into braging rights.
Everything will eventually be stacked, I imagine 3D screens will one day be made by stacking 'conventional' displays. It's sort of like making everything 'nano'. Or making 'thin film' solar cells. It's been done a dozen times in a dozen different applications but it's still good for some research funding and a headline.
Some 'real' news will be that it's being done in a cost-effective way that doesn't kill performance.
And, is the size of the package a major cost adder? We're not talking about a process shrink, or smaller dies, we're talking about a different package for those same dies. I don't get it.
Uh, I know Britons use capitalization, but that much? I could not even read the first paragraph because I started to feel light headed...
He does appear to be vaguely on subject today, guess his posting bot algorithm just got lucky with the keyword it decided to pick up on...
Drashek - if I figure it out and reply with the right code word, do I get a prize?
Sounds Like Graphene Need for Fix. Taking HOT & Hotter, Then add More HOT, in form of diode. Diode allows current to pass One Way Easily & offers High Resistence to Other, Reverse Polarity direction. Attempting to Maintain Single Polarity or Converting Ac to Dc.
Resistence Still Allows Leakage Back To Reverse Pole, In Graphene problem being Carbon Holds Charge like Capacitor, only in valence excited state & When Modulation | voltage anit on, graphene higggly puiggly going off with rickle feed, not helping, ethier. So Reverse Direction going to take Heat, there it sits, inside memory as diode or just enough to activete next cells high, falsely. Running from memory cell & into it, when NOT On Diode is represented as Arrow to show direction of charge,
diode is a two-terminal electronic component that conducts electric current in only one direction
Wake 'Em Up, Stack 'Em Up, , Graphene can take heat, & Has has Very low resistence, so less voltage.
So Far only usable Graphene was in early 1960s' FET, Field effect Transisor &that failed, as inversion still occured & about only thing reliable. So Voltage wobbles, can Wobblies be stabilized? IBM thinqs so, ASU Wastes Potential of entire campus in foolerly of Teacherly feelings, know them, went there: ASU 1969, did that Attended, live there, At Fort McDowell.
drashek