CHARTERED SEMICONDUCTOR is expected to announce that it will be moving to its next chip fab technology in the next few months.
According to Digi-Times, Chartered will launch its 32nm process technology in the fourth quarter of 2009 and move to 28nm in the first half of 2010.
The Singapore-based chip foundry is expected to reveal its new roadmap at the CMOS technology forum in Taiwan today.
The plan is to start test runs with its 32nm silicon-on-insulator (SOI) process this quarter.
The 28nm bulk CMOS technology, which will be based on high-k metal-gate (HKMG) technology from an IBM-led joint-development alliance and built on a gate-first approach, apparently will see the light of day early next year.
The conference is also expected to reveal Chartered's readiness for the 45nm-40nm LP technology, although it is not clear where the company is with that at the moment. µ
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"The plan is to start test runs with its 32nm silicon-on-insulator (SOI) process this quarter.
The 28nm bulk CMOS technology, which will be based on high-k metal-gate (HKMG) technology from an IBM-led joint-development alliance and built on a gate-first approach, apparently will see the light of day early next year."