MICRON and Intel said they jointly developed NAND flash memory offering five times performance over existing memory types.
The joint venture they control – IM Flash Technologies – announced that high speed NAND it will make can deliver 200 megabytes per second at read speeds, and 100MB/s for write speeds.
They have used a specification for NAND called ONFI 2.0 and combine that with a four plane architecture to give higher clock speeds.
The devices will be used in hybrid hard drives, for digital video cameras, and take advantage of USB 3.0, when that’s released. USB 3.0 will offer 10 times the bandwidth of USB 2.0 giving about 4.8 gigabits a second. µ