AMD claims 50% transistor performance breakthrough

CHIP FIRM Advanced Micro Devices (AMD) has given details of triple gate transistors using silicon on insulator (SOI) and metal gates which it claims show 50% more performance than others in the field.

According to AMD, the triple gate technology combines several technologies into one structure.

Listen very carefully. An ultra thin electrical path using fully depleted SOI is surrounded on three sides by nickel-silicide metal gates. That strains the silicon lattice within the electrical path to give better carrier mobility.

Also, claims AMD, the multigate SOI structure increases the effective width of the electrical path and produce higher on current, and lower off current, and also much improves switching, which in turn gives a big bump in overall trannie performance.

If this sort of thing lights your fire, there's a detailed description of the technology here. µ