Micrososft shifts Xbox to TSMC 90nm eDRAM

TSMC says its 90nm eDRAM process features a high-density macro design (80Mb) and performance up to 500MHz.

A spokesVole said the 90nm eDRAM process "is exactly what we need to further strengthen our position in console gaming and entertainment."

TSMC says embedded DRAM eliminates I/O power consumed in external DRAM interfaces, while providing a wider bus and cost savings compared to external DRAM.

And, since thousands of Xboxes don't work properly, the Vole needs to save all the cash it can. µ